FQA19N20C datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
* Low gate charge ( typical 40.5 nC)
* Low Crss ( typical 85 pF)
* Fast switching
* 100% avalanche tested <.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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